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1-A Quad-HBD (Quad-Half-Bridge Driver)
TLE 4208
Overview Features * * * * * * * * * * * * * * Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode P-DSO-28-6 Low saturation voltage; typ.1.2 V total @ 25 C; 0.4 A Output protected against short circuit Error flag diagnosis Overvoltage lockout and diagnosis Undervoltage lockout CMOS/TTL compatible inputs with hysteresis No crossover current Internal clamp diodes Overtemperature protection with hysteresis and diagnosis Enhanced power P-DSO-Package Ordering Code Q67007-A9335 Package P-DSO-28-6
Type TLE 4208 G Description
The TLE 4208 is a fully protected Quad-Half-Bridge-Driver designed specially for automotive and industrial motion control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. In a cascade configuration up to three actuators (DC motors) can be connected between the four half-bridges. These four half-bridges are configured as 2 dual-half-bridges, which are supplied and controlled separately. Operation modes forward (cw), reverse (ccw), brake and high impedance are invoked from a standard interface. The standard enhanced power P-DSO-28 package meets the application requirements and saves PCB-board space and costs. Furthermore the built-in features like diagnosis, over- and undervoltage-lockout, shortcircuit protection, over-temperature protection and the very low quiescent current in stand-by mode will open a wide range of automotive and industrial applications.
Semiconductor Group
1
1998-06-03
TLE 4208
GND EF12 IN1 N.C. OUT1 GND GND GND GND OUT3 N.C. IN3 INH 34 GND
1 2 3 4 5 6 7 TLE 4208 G 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
N.C. INH12 IN2
V S12
OUT2 GND GND GND GND OUT4
V S34
IN4 EF 34 N.C.
AEP02349
Figure 1
Pin Configuration (top view)
Semiconductor Group
2
1998-06-03
TLE 4208
Pin Definitions and Functions Pin No. Symbol Function Ground; negative reference potential for blocking capacitor Error Flag output of half-bridges 1and 2; open collector; low = error Input channel of half-bridge 1; controls OUT1 Not connected Power output of half-bridge 1; full short circuit protected; with integrated clamp diodes Power output of half-bridge 3; full short-circuit protected; with integrated clamp diodes Input channel of half-bridge 3; controls OUT3 Inhibit input of half-bridges 3 and 4; low = half-bridges 3 and 4 in stand-by Error Flag output of half-bridges 3 and 4; open collector; low = error Input channel of half-bridge 4; controls OUT4 Power supply voltage of half-bridges 3 and 4; positive reference potential for blocking capacitor Power output of half-bridge 4; full short circuit protected; with integrated clamp diodes Power-output of half-bridge 2; full short circuit protected; with integrated clamp diodes Power supply voltage of half-bridges 1 and 2; positive reference potential for blocking capacitor Input channel of half-bridge 2; controls OUT2 Inhibit input of half-bridges 1and 2; low = half-bridges 1 and 2 in stand-by 1, 6, 7, 8, 9, GND 14, 20, 21, 22, 23 2 3 EF12 IN1
4, 11, 15, 28 N.C. 5 10 12 13 16 17 18 19 24 25 26 27 OUT1 OUT3 IN3 INH34 EF34 IN4
VS34
OUT4 OUT2
VS12
IN2 INH12
Semiconductor Group
3
1998-06-03
TLE 4208
TLE 4208 G INH 12 27 Inhibit 1,2 DRV1 EF 12 2 Fault-Detection 1,2 DRV2
25
V S12
5
OUT1
IN1
3
IN2
26
INH 12 0 1 1 1 1
IN1
IN2
OUT1
OUT2
X 0 0 1 1
X 0 1 0 1 Inhibit 3,4
Z L L H H
Z L H L H
24
OUT2
1,6,7,8, 9,14, GND 20,21, 22,23 10 OUT3
INH 34
13
DRV3 EF 34 16 Fault-Detection 3,4 DRV4
IN3
12
IN4
17
INH 34 0 1 1 1 1
IN3
IN4
OUT3
OUT4
X 0 0 1 1
X 0 1 0 1
Z L L H H
Z L H L H
19
OUT4
18
V S34
AEB02350
Figure 2
Block Diagram
Semiconductor Group
4
1998-06-03
TLE 4208
Input Logic Functional Truth Table of Halfbridge 1 and 2 INH12 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 OUT1 Z L L H H OUT2 Z L H L H Mode Stand-By Brake LL CW CCW Brake HH
Note: Half-Bridge 1 and 2 connected to a full-bridge
Functional Truth Table of Half-Bridge 3 and 4 INH34 0 1 1 1 1 IN3 X 0 0 1 1 IN4 X 0 1 0 1 OUT3 Z L L H H OUT4 Z L H L H Mode Stand-By Brake LL CW CCW Brake HH
IN: 0 = Logic LOW 1 = Logic HIGH X = don't care Diagnosis EF12 1 0 0 1 1 0 0 EF34 1 1 1 0 0 0 0 Error
OUT: Z = Output in tristate condition L = Output in sink condition H = Output in source condition
Note: Half-Bridge 3 and 4 connected to a full-bridge
no error over temperature of half-bridge 1 and 2 or over voltage of half-bridge 1 and 2 over temperature of half-bridge 3 and 4 or over voltage of half-bridge 3 and 4 over temperature of all half-bridges or over voltage of all half-bridges
Semiconductor Group
5
1998-06-03
TLE 4208
Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values min. Voltages Supply voltage Supply voltage Logic input voltages (IN1; IN2; INH12; IN3; IN4; INH34) Logic output voltage (EF12; EF34) Currents Output current (cont.) Output current (peak) Output current (diode) Output current (EF) Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin Junction ambient max. Unit Remarks
VS12, VS34 VS12, VS34 VI
- 0.3 -1 -5
45 - 20
V V V
-
t < 0.5 s; IS12, IS34 > - 2 A 0V < VS12, VS34 < 45 V
VEF12, VEF34
- 0.3
20
V
0 V < VS12, VS34 < 45 V
IOUT1-4 IOUT1-4 IOUT1-4 IEF12-34
- - -1 -2
- - 1 5
A A A mA
internally limited internally limited - -
Tj Tstg
- 40 - 50
150 150
C C
- -
Rthj-pin RthjA
- -
25 65
K/W K/W
measured to pin 7 -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Semiconductor Group
6
1998-06-03
TLE 4208
Operating Range Parameter Supply voltage Symbol Limit Values min. max. V V After VS12, VS34 rising above VUV ON Outputs in tristate Outputs in tristate - Unit Remarks
VS12, VS34 Supply voltage increasing VS12, VS34 Supply voltage decreasing VS12, VS34 Logic input voltages VI
(IN1; IN2; INH12; IN3; IN4; INH34) Junction temperature
VUV OFF 18
- 0.3 - 0.3 -2
VUV ON
VUV OFF V
18 V
Tj
- 40
150
C
-
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group
7
1998-06-03
TLE 4208
Electrical Characteristics 8 V < VS12 = VS34 < 18 V; INH12 = INH34 = HIGH; IOUT1-4 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Current Consumption INH12 = INH34 = LOW Quiescent current Quiescent current typ. max. Unit Test Condition
IS IS
- -
- 20
100 40
A A
IS = IS12 + IS34 IS = IS12 + IS34; VS12 = VS34 = 13.2 V; Tj = 25 C
INH12 = HIGH and INH34 = LOW or INH12 = LOW and INH34 = HIGH Supply current Supply current Supply current
IS12, IS34 - IS12, IS34 - IS12, IS34 -
10 - -
20 30 50
mA mA mA
-
IOUT1/3 = 0.4 A IOUT2/4 = - 0.4 A IOUT1/3 = 0.8 A IOUT2/4 = - 0.8 A
Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF hysteresis
VUV ON VUV OFF VUV HY VOV OFF VOV ON VOV HY
- 5 - - 18 -
6.5 6 0.5 20
7.5 - - 24
V V V V V V
VS12, VS34
increasing
VS12, VS34
decreasing
VUV ON - VUV OFF VS12, VS34
increasing
19.5 - 0.5 -
VS12, VS34
decreasing
VOV OFF - VOV ON
Semiconductor Group
8
1998-06-03
TLE 4208
Electrical Characteristics (cont'd) 8 V < VS12 = VS34 < 18 V; INH12 = INH34 = HIGH; IOUT1-4 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Outputs OUT1; OUT2; OUT 3; OUT 4 Saturation Voltages Source (upper) IOUT12, IOUT34 = - 0.2 A Source (upper) IOUT12, IOUT34 = - 0.4 A Sink (upper) IOUT12, IOUT34 = - 0.8 A Sink (lower) IOUT12, IOUT34 = 0.2 A Sink (lower) IOUT12, IOUT34 = 0.4 A Sink (lower) IOUT12, IOUT34 = 0.8 A Total Drop IOUT12, IOUT34 = 0.2 A Total Drop IOUT12, IOUT34 = 0.4 A Total Drop IOUT12, IOUT34 = 0.8 A Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower
Notes see page 11.
Unit Test Condition
typ. max.
VSAT U VSAT U VSAT U VSAT L VSAT L VSAT L
- - - - - -
0.85 1.15 0.90 1.20 1.10 1.50 0.15 0.23 0.25 0.40 0.45 0.75
V V V V V V
Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C
VSAT VSAT VSAT
- - -
1 1.2 1.6
1.4 1.7 2.5
V V V
VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L
VFU ILKU VFL
- - -
1 - 0.9
1.5 5 1.4
V mA V
IF = 0.4 A IF = 0.4 A1) IF = 0.4 A
Semiconductor Group
9
1998-06-03
TLE 4208
Electrical Characteristics (cont'd) 8 V < VS12 = VS34 < 18 V; INH12 = INH34 = HIGH; IOUT1-4 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Input Interface Logic Inputs IN1; IN2; IN3; IN4 H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Logic Inputs INH12; INH34 H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Error-Flags EF12; EF34 L-output voltage level Leakage current typ. max. Unit Test Condition
VIH VIL VIHY IIH IIL
- 1.0 - -2
2.0 1.5 0.5 -
3.0 - - 10
V V V A A
- - -
- 100 - 20 - 5
VI = 5 V VI = 0 V
VIH VIL VIHY IIH IIL
- 1.0 - - - 10
2.7 2.0 0.7 -
3.5 - - 10
V V V A A
- - -
100 250
VINH = 5 V VINH = 0 V
VEFL IEFLK
- -
0.2 -
0.4 10
V A
IEF = 2 mA 0 V < VEF < 7 V
Semiconductor Group
10
1998-06-03
TLE 4208
Electrical Characteristics (cont'd) 8 V < VS12 = VS34 < 18 V; INH12 = INH34 = HIGH; IOUT1-4 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis
1)
Unit Test Condition
typ. max.
TjSD TjSO
T
150 120 -
175 200 - 30 170 -
C C K
- - -
Guaranteed by design.
Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 C and the given supply voltage.
Semiconductor Group
11
1998-06-03
TLE 4208
Watchdog In Watchdog Out Reset Out Q
8 1 14 9 6 3,4,5,10,11,12 7 D GND TLE 4278 G
13
Input Watchdog Adjust
VS = 12 V
D1 1N4001
2
R QA 10 k
WDO WDI R
V CC
R QB 10 k
Reset Adjust
CQ 22 F
CD 100 nF
R WA 100 k
C CS 100 nF 22 F
28 V S12
TLE 4208 G INH12 4 Inhibit 1,2 DRV1 EF12 25 Fault-Detection 1,2
DRV2
27 OUT1
IN1 24
INH12
IN1 IN2 OUT1 OUT2
M1 1 OUT2
IN2 5
0 1 1 1 1
X 0 0 1 1
X 0 1 0 1 Inhibit 3,4
Z L L H H
Z L H L H
6,7,8,9,
C
GND
INH34 18
DRV3 EF34 11 Fault-Detection 3,4
DRV4
20,21, 22,23 13 OUT3
IN3 10
INH34
IN3
IN4 OUT3 OUT4
M2 15 OUT4 14 V S34
AES02351
IN4 19
0 1 1 1 1
X 0 0 1 1
X 0 1 0 1
Z L L H H
Z L H L H
Figure 3
Application Circuit 1 (Device is used as Dual-Full-Bridge-Driver)
Semiconductor Group
12
1998-06-03
TLE 4208
Diagrams Quiescent current IS over Temperature
50 A
AED02352
Saturation Voltage of Source VSAT U over Temperature
1500
AED02308
V SAT U
1250 mV 1000
VS = 14 V
S 40
OUT = 800 mA OUT = 400 mA
30
VS = 18 V
750
OUT = 200 mA
20
VS = 13.2 V
500
VS = 8 V
10
250
0 -50
0
50
100 C 150 Tj
0 -50
0
50
100 C 150
Tj
Saturation Voltage of Sink VSAT L over Temperature
1000
AED02309
Total Drop at outputs VSAT over Temperature
2000
AED02310
V SAT L
mV 750
VS = 14 V
V SAT
mV 1500
VS = 14 V
OUT = 800 mA
OUT = 400 mA
500
OUT = 800 mA
1000
OUT = 200 mA
OUT = 400 mA
250
500
OUT = 200 mA
0 -50
0
50
100 C 150
0 -50
0
50
100 C 150
Tj
Tj
Semiconductor Group
13
1998-06-03
TLE 4208
Package Outlines P-DSO-28-6 (Plastic Dual Small Outline Package)
0.35 x 45
2.65 max
2.45 -0.2
0.2 -0.1
1.27 0.35 +0.15 2) 0.2 28x 28 15 0.1
0.4 +0.8 10.3 0.3
1 Index Marking
18.1 -0.4 1)
14
1) Does not include plastic or metal protrusions of 0.15 max rer side 2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 14
0.23 +0.0 9 8 ma x
GPS05123
7.6 -0.2 1)
Dimensions in mm 1998-06-03

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